| PART |
Description |
Maker |
| GS74116U-8 GS74116J-10I GS74116TP-12I |
8ns 256K x 16 4Mb asynchronous SRAM
10ns 256K x 16 4Mb asynchronous SRAM
12ns 256K x 16 4Mb asynchronous SRAM
|
GSI Technology
|
| GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44
256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM
RES, MTF 20K 1/4W 2%
ER 16C 16#16 SKT PLUG
ER 13C 3#8 3#12 7#16 SKT PLUG
10ns 256K X 16 4Mb Asynchronous SRAM
256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM
Electronic Theatre Controls, Inc.
GSI[GSI Technology]
N.A.
ETC
|
| GS74116ATJ |
256K x 16 4Mb Asynchronous SRAM
|
GSI Technology
|
| GS74116TP-15 GS74116TP-10 GS74116TP-10I GS74116TP- |
256K x 16 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| GS74117AX-12 GS74117AX-8 GS74117AX-7I GS74117AX-10 |
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 8 ns, PBGA48
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 7 ns, PBGA48
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 10 ns, PBGA48
|
SRAM
GSI Technology, Inc.
|
| N04Q16YYC2B N04Q1612C2BB-15C N04Q1612C2BB-15I N04Q |
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| GS840E18AB-190 GS840E18AT-190I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、写延迟LVTTL高速同步静态RAM (256K x 18) 4Mb的后写入LVTTL高速同步SRAM56 × 18位）分位，写延迟LVTTL高速同步静态随机存储器56 × 18位）
|
Sony, Corp.
|
| GS74104J GS74104TP |
1M x 4 4Mb Asynchronous SRAM
|
GSI Technology
|
| IS61LV25616AL IS61LV25616AL-10B IS61LV25616AL-10BI |
20 AMP MINIATURE PC BOARD RELAY
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| GS840F18AGT-7.5I GS840F36AGT-7.5I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
